A gate- and flux-controlled supercurrent diode effect

Gate-controlled Diode – a New Way for Electronic Circuits

The gate-controlled diode (or gated diode) is a semiconductor device that combines the function of a p-n junction and a MOS capacitor [1, 2]. The schematic cross-section structure is shown in figure 1. The terminals of the junction are noted A (anode) and K (cathode), while the control electrode is the gate G. The voltage across the p-n junction working in avalanche breakdown regime has the abs...

Ambipolar Effect Free Double Gate PN Diode Based Tunnel FET

A gate-tunable single-molecule diode.

In the pursuit of down-sizing electronic components, the ultimate limit is the use of single molecules as functional devices. The first theoretical proposal of such a device, predicted more than four decades ago, is the seminal Aviram-Ratner rectifier that exploits the orbital structure of the molecule. The experimental realization of single-molecule rectifiers, however, has proven to be challe...

Electrolyte gate-controlled Kondo effect in SrTiO3.

We report low-temperature, high-field magnetotransport measurements of SrTiO(3) gated by an ionic gel electrolyte. A saturating resistance upturn and negative magnetoresistance that signal the emergence of the Kondo effect appear for higher applied gate voltages. This observation, enabled by the wide tunability of the ionic gel-applied electric field, promotes the interpretation of the electric...

Optically controlled optical gate with an optoelectronic dual diode structure – theory and experiment

A low-power, surface-normal optically controlled optical gate that incorporates two stacked AlGaAs diodes has been tested using both picosecond and femtosecond pulses. The device opens and closes within 20 picoseconds with a 30% reflectivity change. Repeated gating with 20 picosecond periods has been demonstrated— a repetition period significantly faster than the external RC time constant. A th...